| PART |
Description |
Maker |
| MTD5010M |
Ultra High Speed Photo Diode
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| NJL6167R-1 |
HIGH SPEED PIN PHOTO DIODE
|
New Japan Radio
|
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 10-FY07BIA050SM-M523E38 10-FY07BIA050SM-M523E38-3 |
Ultra High-Speed IGBT and Diode
|
Vincotech
|
| 1SS181 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS361 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS200 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS344 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS382 |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| CFD4448 |
SURFACE MOUNT ULTRA HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| KDS226 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| HN2D02FU E001993 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
